Applying the point contacted structure on the P+ surface of the mono-crystalline silicon solar cell for the metallization effectively decreases the surface area of the semiconductor directly contacted with the metal. The boron solubility in silicon is one order higher than the aluminium does, and the boron doped surface can still be available for adding other passivation layers. We have used this structure in industrialized screen-printing solar cell manufacture line in order to highly improve the performance of the solar cells. In this paper we will report the brief production techniques sequence and the different methods to approach to this structure. Brief analysis and explanation of this solar cell’s design and characteristics will be performed in the end.