SET Proceedings 2978-4387 Caravel Press 10.65582/set.2008.269 2008.269 Change of conductivity of ZnO films by an annealing PenkovOleksiy V. penkov@cheju.ac.kr PlaksinVadim Yu. MansurRakib KoMin Gook LeeHeon-Ju Department of Energy Engineering, Cheju National University, Jeju-si Korea 24082008 7 1 978-1-995850-08-5 1928 1930 24 August 2008 © 2008 Copyright WSSET 2008

The experiment on annealing of ZnO films was performed. Films were deposited by DC Arc plasmatron. The influence of the annealing temperature on the film structure and conductivity were studied. It was shown that annealing at 550°C improves the crystalline structure of the ZnO film and decreases the films resistivity.

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