One-dimensional unsteady heat conduction equation inside the semiconductor thermoelectric generator was established and numerically calculated using Binder-Schmidt explicit method. The results showed that the semiconductor thermoelectric generator has a better dynamic response for the temperature and thermal equilibrium state can be reached within 6 to 10 seconds under a low temperature. Furthermore, the temperature change inside the semiconductor thermoelectric generator is linear from the hot side to the cold side.
Keywords. thermoelectric generator; temperature distribution; numerical simulation
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How to cite this article
Wang, L. and Shen, S. (2005). 'Numerical Simulation of Temperature Distribution Inside the Semiconductor Thermoelectric Generator under A Low Temperature'. SET Proceedings, 4(1), pp. 59-63. https://doi.org/10.65582/set.2005.013
