The experiment on annealing of ZnO films was performed. Films were deposited by DC Arc plasmatron. The influence of the annealing temperature on the film structure and conductivity were studied. It was shown that annealing at 550°C improves the crystalline structure of the ZnO film and decreases the films resistivity.
Keywords. plasmatron; zno; annealing
How to cite this article
Penkov, O.V., Plaksin, V.Y., Mansur, R., Ko, M.G. and Lee, H. (2008). 'Change of conductivity of ZnO films by an annealing'. SET Proceedings, 7(1), pp. 1928-1930. https://doi.org/10.65582/set.2008.269
