Structure and electrical properties of ZnO films deposited at the atmospheric pressure on a cold substrate by a DC Arc Plasmatron were studied. SEM and XRD techniques were used. It was shown that in the as-deposited state the films have an amorphous structure and resistance about 2 MΩ/cm. Further annealing at the temperatures higher 500°C leads to crystallisation and decreasing of the resistivity. Annealing in hydrogen atmosphere at 550°C improves the crystalline structure of the ZnO films and decreases resistivity down to 5Ω/cm.
Keywords. plasmatron; zno; annealing
How to cite this article
Penkov, O.V., Plaksin, V.Y., Joa, S.B., Lee, H. and Kim, J.H. (2009). 'Deposition of the ZnO transparent electrodes for solar cells at the atmospheric pressure'. SET Proceedings, 8, pp. 1-4. https://doi.org/10.65582/set.2009.026
